After an Engineer’s degree and a master degree obtained at Grenoble INP and Université Joseph Fourier, and a PhD related to Silicon-On-Insulator (SOI) devices at Thomson-TMS and LPCS (now called IMEP), T. Ouisse was a post-doctoral fellow of the French nuclear agency (CEA), where he was in charge of SOI MOSFET reliability (1991). He obtained a permanent researcher position at the French National Center for Research (CNRS) in 1992, where he founded and headed the Silicon Carbide (SiC) team at IMEP, whose main goal was the development of high power/high temperature SiC devices. In 2000, he spent one sabbatical year at IMEL, NCSR (Athens, Greece), where he studied light emission from strongly confined Si structures. Later, he joined the LIPHY laboratory (Grenoble) in 2001, where he developed conjugated polymer devices for organic electronics. He then moved to the Institut Néel (CNRS, Grenoble) in 2006. From 1994 to 2008, he was also involved in nano-device physics activities (SOI quantum wires with the NTT basic research Labs, Atsugi, quantum-coherent electron transport imaging with a home-built, low Temperature AFM at LIPHY and Néel Institute, High Magnetic Field electron transport at LNCMI, etc.). After having re-oriented his research toward materials science and solid state physics, he finally moved to LMGP, Grenoble, and presently works on the growth and study of the physical properties of single crystals of various carbides and borides. T. Ouisse is most particularly involved in research about MAX phases, MXenes and other nano-lamellar phases such as MAB phases. The specificity of his group’s activity is to synthesize single crystals of those compounds by high temperature solution growth, in order to study physical properties such as the electronic structure, magnetism, magneto-transport, phonons, etc. Single crystals allow one to measure directly physical anisotropies. This is often achieved through the use of large scale instruments. Single crystals also permit mechanical exfoliation of those phases and to fabricate 2D electron devices. T. Ouisse is the author of one book on the physics of nanostructures and mesoscopic devices, published by Wiley in 2008.